High purity Carbon Tetrafluoride

English denomination: Carbon Tetrafluoride or Tetrafluoromethane Molecular formula: CF4. Opposite molecular weight: 88.00

Tetrafluoromethane (CF4)

 

1. Tetrafluoromethane (carbon tetrafluoride) characteristic

 Under the normal temperature, the tetrafluoro-methane is the condensibility gas which the achromatic color, the odourlessness, do not burn, the volatility is high, is one of stablest organic compounds, when 900°C, with the copper, the nickel, the tungsten, the molybdenum did not respond, only under carbon arc temperature slow decomposition, in the water, under 25°C and 0.1Mpa its solubility is slightly soluble 0.0015% (load ratio), when with ignitable gaseous combustion, will decompose produces the virulent fluoride. 

2. value of Tetrafluoromethane characteristic

CAS	75-73-022033
EINECS	200-896-5
UN NO.	UN1956
English name	tetrafluoromethane
Aliss name	R14,carbon tetrafluoride
Molecular formula	CF4	properties	Colorless,Odorless gas
Molecular weight	88.01	Steam pressure	13.33kPa(15.07°C)
melting point	-183.6°C	dissolubility	insoluble in water
boiling point	-128.0°C
density	relative density (water =1)1.61(-130°C)	Stability	steady
Dangerous lable	5(non-flammable gas)	Main use	Used to low temperature the ion do a law etching to etc. of the cold agent and integrated circuit technique

3. Quality standard of Tetrafluoromethane

 

ITEM	COMPANY STANDARD
Purity CF4%	≥99.9	≥99.99
volume fraction of nitrogen gas(N2)/10-6	≤350	≤40
volume fraction of oxygen(O2)/10-6	≤350	≤20
mass fraction of moisture(H2O)/10-6	≤5	≤1
volume fraction of carbon monoxide(CO)/10-6	≤20	≤10
volume fraction of carbon dioxide(CO2)/10-6	≤80	≤10
mass fraction of acidity(Account by HF)/10-6	≤0.5	≤0.1
volume fraction of other fluorine carbon compound(F-) /10-6	actual measurement	≤10
The volume fraction of total impurity /10-6	≤1000	≤100

4.main uses of Tetrafluoromethane

As the plasma dry etching technique used in a low temperature system air - cooling agent and integrated circuit, Currently, Tetrafluoromethane is the usage biggest as plasma etching technique gas in the micro-electronics industrial , its tall purely gas and the mixed gas(high-purity Tetrafluoromethane mixed with the high-purity oxygen), can extensively be applied to silicon, silicon dioxide, silicon nitride, phosphorosilicate glass  and the etching technique of tungsten thin - film material. At electron spare part surface cleaning, the manufacture of solar cell, laser technique, gaseous insulation, low temperature system air - cooling, leakage inspection agent, control cosmos rocket carriage, the detergent in the printed circuit also in great quantities used. Tetrafluoromethane the dissolving of oxygen good, therefore be used for by the scientist super - depth to dive experiment to replace common compressed air. Have already achieved success on rat currently, in the depth of 275-366 meters, the small white rat is still safe to escape from danger.

High purity Carbon Tetrafluoride